dated : 03/12/2004 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) st 9011 npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided in to six groups, d, e, f, g, h and i, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 50 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 30 ma power dissipation p tot 400 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
dated : 03/12/2004 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) st 9011 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =5v, i c =1ma current gain group d e f g h i h fe h fe h fe h fe h fe h fe 28 39 54 72 97 132 - - - - - - 45 60 80 108 146 198 - - - - - - collector base breakdown voltage at i c =100 a v (br)cbo 50 - - v collector emitter breakdown voltage at i c =1ma v (br)ceo 30 - - v emitter base breakdown voltage at i e =100 a v (br)ebo 5 - - v collector cutoff current at v cb =50v i cbo - - 100 na emitter cutoff current at v cb =5v i ebo - - 100 na collector emitter saturation voltage at i c =10ma, i b =1ma v ce(sat) - 0.08 0.3 v base emitter voltage at v ce =5v, i c =1ma v be(on) 0.60 0.7 0.75 v collector base capacitance at v cb =10v, f=1mhz c cbo - 1.5 - pf gain bandwidth product at v ce =5v, i c =1ma f t 150 370 - mhz
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